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Freescale Semiconductor Technical Data
Document Number: MHL21336NN Rev. 0, 12/2006
Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. * Third Order Intercept: 45 dBm Typ * Power Gain: 31 dB Typ (@ f = 2140 MHz) * Input VSWR v 1.5:1 Features * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * RoHS Compliant
MHL21336NN
2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25C unless otherwise noted)
Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +5 - 40 to +100 - 20 to +100 Unit Vdc dBm C C
Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25C; 50 System)
Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression (f = 2140 MHz) (f = 2110 - 2170 MHz) (f = 2140 MHz) Symbol IDD Gp GF P1dB ITO NF Min -- 30 -- 34 44 -- Typ 500 31 0.15 35 45 4.5 Max 525 33 0.4 -- -- 5 Unit mA dB dB dBm dBm dB
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) Noise Figure (f = 2170 MHz)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHL21336NN 1
RF Device Data Freescale Semiconductor
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
3G Band RF Linear LDMOS Amplifier
LIFETIME BUY
TYPICAL CHARACTERISTICS
G p , POWER GAIN/RETURN LOSS (dB) Gp VDD = 26 Vdc TC = 25_C P1dB, ITO (dBm)
30 20 10 0 -10
50 ITO 45 40 35 30 25 1800 P1dB
ORL IRL
-20 -30 -40 1400 1600 1800 2000 2200 2400 2600 2800
1900
2000
2100
2200
2300
2400
2500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
LIFETIME BUY
Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency
Figure 2. P1dB, ITO versus Frequency
40 VDD = 26 Vdc f = 2140 MHz
600
48 47 VDD = 26 Vdc f = 2140 MHz
38 37 36 ITO 35 P1dB 34 33 32 120
35 Gp
550 46 I DD (mA) ITO (dBm) 500 IDD 450 43 400 120 42 -40 45 44
30
25
20 -40
-20
0
20
40
60
80
100
-20
0
20
40
60
80
100
TEMPERATURE (_C)
TEMPERATURE (_C)
Figure 3. Power Gain, IDD versus Temperature
Figure 4. ITO, P1dB versus Temperature
-1400 -1420 VDD = 26 Vdc f = 2140 MHz
2.4 2.3 GROUP DELAY (nS)
0.6 0.5 0.4 0.3 0.2 PHASE LINEARITY 0.1 0 -40 GF
VDD = 26 Vdc f = 2110 - 2170 MHz
0.6 0.5 0.4 0.3 0.2 0.1 0 120
PHASE ( _ )
-1440 -1460 GROUP DELAY
PHASE
2.2 2.1
-1480
2
-1500 -40
-20
0
20
40
60
80
100
1.9 120
-20
0
20
40
60
80
100
TEMPERATURE (_C)
TEMPERATURE (_C)
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
Figure 6. Gain Flatness, Phase Linearity versus Temperature
MHL21336NN 2 RF Device Data Freescale Semiconductor
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
P1dB (dBm)
40
55
VDD = 26 Vdc TC = 25_C
G p , POWER GAIN (dB)
G F , GAIN FLATNESS (dB)
PHASE LINEARITY ( _ )
TYPICAL CHARACTERISTICS
31.8 31.6 G p , POWER GAIN (dB) IDD 31.4 31.2 Gp f = 2140 MHz TC = 25_C
700 600
47.5 47 46.5 f = 2140 MHz TC = 25_C
37 36.5 36 P1dB ITO 35 34.5 34 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) 35.5
500 400
46
45.5 31 30.8 22 300 200 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) 45 44.5 22
LIFETIME BUY
Figure 7. Power Gain, IDD versus Voltage
Figure 8. ITO, P1dB versus Voltage
-1435 f = 2140 MHz TC = 25_C GROUP DELAY
2.3
0.35 0.3 f = 2110 - 2170 MHz TC = 25_C
0.35 0.3 0.25 GF 0.2
-1436
2.25
0.2
-1437 PHASE
2.2
0.15 0.1 PHASE LINEARITY
0.15 0.1
-1438
2.15
0.05 2.1 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) 0 22
0.05 0 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS)
-1439 22
Figure 9.
Phase(1),
1. In Production Test Fixture
Group Voltage
Delay(1)
versus
Figure 10. Phase Linearity, Gain Flatness versus Voltage
MHL21336NN RF Device Data Freescale Semiconductor 3
PHASE LINEARITY ( _ )
0.25
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
P1dB (dBm)
GROUP DELAY (nS) G F , GAIN FLATNESS (dB)
PHASE ( _ )
I DD (mA) ITO (dBm)
PACKAGE DIMENSIONS
A G 0.020 (0.51)
M
A S
2X
Q 0.008 (0.20)
M
TS
M
A
M
TA
M
B
R J K W
4X 1 2 3 4
S
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC
D
M
N L H F E C T
SEATING PLANE M
0.020 (0.51)
M
TB
4X
P 0.020 (0.51)
T
STYLE 1: PIN 1. 2. 3. 4. CASE:
RF INPUT VDD1 VDD2 RF OUTPUT GROUND
CASE 301AP - 02 ISSUE E
MHL21336NN 4 RF Device Data Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Dec. 2006 * Initial Release of Data Sheet Description
MHL21336NN RF Device Data Freescale Semiconductor 5
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MHL21336NN 6Rev. 0, 12/2006
Document Number: MHL21336NN
RF Device Data Freescale Semiconductor

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